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MOT3N10B2

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Tape & Reel (TR)
MOSFET 100V 3A 3V SOT-23

Product Attributes​

Category
Supplier Device Package SOT-23
VDss[V](min) 100
ID[A](25℃) 3
VGS(th)[V](max) 3
Rds(on) [ mohm] at Vgs=10V(TYP) 220
Rds(on) [ mohm] at Vgs=10V(MAX) 300
Rds(on) [ mohm] at Vgs=4.5V(TYP) 280
Rds(on) [ mohm] at Vgs=4.5V(MAX) 350
Rds(on) [ mohm] at Vgs=2.5V(TYP)
Rds(on) [ mohm] at Vgs=2.5V(MAX)
Qg [nC] at 10V Typ 18.2
Qgs [nC] Typ 3
Qgd [nC] Typ 4.1
Configuration Single_N
Package Type Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Operating Temperature -40°C ~ 150°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 260mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 20 V
Power Dissipation (Max) 350mW

Product Description

MOT3N10B2 is a 100V N MOSFET with an ID current of 3A. It is a very commonly used MOS product on the market. It has the characteristics of small size, light weight, stability and reliability, low on-state internal resistance and high current carrying capacity, and low price. It is widely used in DC power supply, signal processing, LED drive circuits, and is suitable for high performance, miniaturization and low power consumption fields.

Documents and Media

Datasheet

Product Application Areas

Applicable to electronic cigarettes, electric toys, table lamps

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Phone

+86 15827290669

Address

19th Floor, Shenchengtou Center Building, Guiyuan Subdistrict, Luohu District, Shenzhen City, Guangdong Province, China

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