MOT55N06B
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Product Attributes
| Category | Medium/Low Trench SGT MOS |
| Supplier Device Package | TO-220C |
| BVDSS | 60 |
| ID[A](25℃) | 55 |
| VGS(th)[V](max) | 4 |
| Rds(on) [ mohm] at Vgs=10V（TYP) | 17 |
| Rds(on) [ mohm] at Vgs=10V（MAX) | 22 |
| Rds(on) [ mohm] at Vgs=4.5V（TYP) | |
| Rds(on) [ mohm] at Vgs=4.5V（MAX) | |
| Rds(on) [ mohm] at Vgs=2.5V（TYP) | |
| Rds(on) [ mohm] at Vgs=2.5V（MAX) | |
| Qg [nC] at 10V Typ | 36 |
| Qgs [nC] Typ | 9.9 |
| Cargo Status | Active |
| Cargo Status | Active |
| Qgd [nC] Typ | 6.6 |
| Configuration | N |
| Package Type | Tube |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1478 pF @ 30 V |
| Power Dissipation (Max)(W) | 100 |
Product Description
MOT55N06B is a middle-voltage with high-power N- channel Mosfet with VDS at 60V and ID at 55A. Owing to its advanced SGT technology it gain many benefits such as super low RDS(on), low Qg(nC) and gate voltage, low VGS(th) , and cost-effective. The Mosfet is mainly used for LED lightings, DC switching power supplies, and motor drive etc.
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Datasheet
Product Application Areas
It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.