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MOT55N06B

It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.

BVDSS 60
ID[A](25℃) 55
VGS(th)[V](max) 4
Rds(on) [ mohm] at Vgs=10V(TYP) 17
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Product information

Specifications, documents and sourcing support for MOT55N06B.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-220C
BVDSS
60
ID[A](25℃)
55
VGS(th)[V](max)
4
Rds(on) [ mohm] at Vgs=10V(TYP)
17
Rds(on) [ mohm] at Vgs=10V(MAX)
22
Package
Tube
Mounting Type
Through Hole
Vgs (Max)
±20V

MOT55N06B

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 55V 60A 17 TO-220C

MOT55N06B is a middle-voltage with high-power N- channel Mosfet with VDS at 60V and ID at 55A. Owing to its advanced SGT technology it gain many benefits such as super low RDS(on), low Qg(nC) and gate voltage, low VGS(th) , and cost-effective. The Mosfet is mainly used for LED lightings, DC switching power supplies, and motor drive etc.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
STMicroelectronicsSTP60NF06MOT55N06B
Vishay(原IR)IRF2805SMOT55N06B
onsemi(原Fairchild)FQP60N06LMOT55N06B
扬杰科技(YJ)YJB55N06BMOT55N06B
华润微(CRMC)CRMC55N06BMOT55N06B

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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