MOT65R850F
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Product Attributes
| Category | High Voltage SJ COOL MOS |
| Supplier Device Package | TO-220FP |
| ID(A) | 4.5 |
| VDss[V] | 650 |
| VGS(th)(V) | 2-4 |
| RDSON（MAX)(Ω) | 0.9 |
| Package Type | Tube |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Cargo Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) | 238 pF @ 25 V |
| Power Dissipation (Max)(W) | 20 |
Product Description
MOT65R850F is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.
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Datasheet
Product Application Areas
It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.