MOT120N10E
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Product Attributes
| Category | Medium/Low Trench SGT MOS |
| Supplier Device Package | TO-263 |
| BVDSS | 100 |
| ID[A](25℃) | 120 |
| VGS(th)[V](max) | 4 |
| Rds(on) [ mohm] at Vgs=10V（TYP) | 4.3 |
| Rds(on) [ mohm] at Vgs=10V（MAX) | 5 |
| Rds(on) [ mohm] at Vgs=4.5V（TYP) | |
| Rds(on) [ mohm] at Vgs=4.5V（MAX) | |
| Rds(on) [ mohm] at Vgs=2.5V（TYP) | |
| Rds(on) [ mohm] at Vgs=2.5V（MAX) | |
| Qg [nC] at 10V Typ | 84.7 |
| Qgs [nC] Typ | 30.6 |
| Cargo Status | Active |
| Cargo Status | Active |
| Qgd [nC] Typ | 18.3 |
| Configuration | N |
| Package Type | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 84.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
| Power Dissipation (Max)(W) | 130 |
Product Description
MOT120N10E is a middle-voltage with high-power N- channel Mosfet with VDS at 100V and ID at 129A. It has many benefits such as large package size, quick switching speed, low RDS(on), low gate drive current, low Ciss(pF), and cost-effective. Those highlight its cost-effective during the applications in vavious electronic devices, especially in situations where fast switching on-off and efficient energy conversion are required. It is mainly used for Charger, adapter, LED lighting applications.
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Datasheet
Product Application Areas
It is widely used in various application fields such as PD, adapter, power bank and LED lighting, etc.