MOT4N65C
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Product Attributes
| Category | High-Voltage Planar MOS |
| Supplier Device Package | TO-251 |
| ID(A) | 4 |
| VDss[V] | 650 |
| VGS(th)(V) | 2-4 |
| RDSON（MAX)(Ω) | 2.8 |
| Package Type | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Cargo Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
| Poer Dissipation (Max) | 75 |
Product Description
MOT4N65C is a VD MOSFET, which is designed and manufactured with the best planar technology of the industry. It has a lower conduction loss and switching loss, so as to suitable for various switching mode power supply applications.
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Datasheet
Product Application Areas
It is widely used in UPS, electric vehicles, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.