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MOT60R380D

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 11
VDss(V) 600
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.38
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Product information

Specifications, documents and sourcing support for MOT60R380D.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-252
ID(A)
11
VDss(V)
600
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.38

Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 600V 11A 0.38 TO-252

MOT60R380D is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses, and able to operate stably under high voltage conditions. It is suitable for high-frequency applications.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS CE)IPD60R380CEMOT60R380D
Infineon (CoolMOS P7)IPD60R385P7SMOT60R380D
STMicroelectronics (MDmesh M2)STD13N60M2MOT60R380D
STMicroelectronics (MDmesh M6)STD13N60M6MOT60R380D
onsemi (SuperFET)FCD11N60FMOT60R380D
Toshiba (DTMOS)TK11P60WMOT60R380D
新洁能(NCE)NCD11N60FDMOT60R380D
扬杰科技(YJ)YDM11N60DMOT60R380D
华润微(CRMC)CRG11N60DMOT60R380D
无锡紫光微(UNIGROUP)TPD60R380MMOT60R380D

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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