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MOT60R280D

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 15
VDss(V) 600
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.28
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Product information

Specifications, documents and sourcing support for MOT60R280D.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-252
ID(A)
15
VDss(V)
600
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.28

Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 600V 15A 0.28 TO-252

MOT60R280D is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS CE)IPD60R280CEMOT60R280D
Infineon (CoolMOS P7)IPD60R280P7SMOT60R280D
STMicroelectronics (MDmesh M2)STD15N60M2MOT60R280D
STMicroelectronics (MDmesh M6)STD15N60M6MOT60R280D
onsemi (SuperFET)FCD15N60FMOT60R280D
Toshiba (DTMOS)TK15P60WMOT60R280D
新洁能(NCE)NCD15N60FDMOT60R280D
扬杰科技(YJ)YDM15N60DMOT60R280D
华润微(CRMC)CRG15N60DMOT60R280D
无锡紫光微(UNIGROUP)TPD60R280MMOT60R280D

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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