MOT30P10D
Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.
Product information
Specifications, documents and sourcing support for MOT30P10D.
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- Supplier Device Package
- TO-252
- BVDSS
- -100
- ID[A](25℃)
- -30
- VGS(th)[V](max)
- -3
- Rds(on) [ mohm] at Vgs=10V（TYP)
- 48
- Rds(on) [ mohm] at Vgs=10V（MAX)
- 57
MOT30P10D
Review electrical characteristics, package drawings and test conditions.
Overview & applications
Product positioning and recommended use cases.
MOSFET P -30V -100A 48 TO-252
MOT30P10D is a P-channel trench MOSFET in TO-252, rated at 100 V and 30 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| onsemi（原Fairchild） | FDD8P30 | MOT30P10D |
| Vishay | Si7465DP | MOT30P10D |
| Nexperia | PSMN048-30YLDX | MOT30P10D |
| 扬杰科技（YJ） | YJD30P10D | MOT30P10D |
| 华润微（CRMC） | CRMC30P10D | MOT30P10D |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
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