Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Active

MOT130N03C

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 30
ID[A](25℃) 130
VGS(th)[V](max) 2
Rds(on) [ mohm] at Vgs=10V(TYP) 2.3
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT130N03C.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-251
BVDSS
30
ID[A](25℃)
130
VGS(th)[V](max)
2
Rds(on) [ mohm] at Vgs=10V(TYP)
2.3
Rds(on) [ mohm] at Vgs=10V(MAX)
3.5

MOT130N03C

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 130V 30A 2.3 TO-251

MOT130N03C is an N-channel trench MOSFET in TO-251, rated at 30 V and 130 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
NexperiaPSMN2R3-120YLDXMOT130N03C
VishaySi7462DPMOT130N03C
扬杰科技(YJ)YJC130N03CMOT130N03C
华润微(CRMC)CRMC130N03CMOT130N03C
东海半导体(WXDH)WNSC13N2TNMOT130N03C

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.