MOT2518J2
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Package Type:
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Item Description:
Datasheet:
Product Attributes
| Category | Medium/Low Trench SGT MOS |
| Supplier Device Package | DFN2*2-6L |
| BVDSS | -15 |
| ID[A](25℃) | -8 |
| VGS(th)[V](max) | -0.9 |
| Rds(on) [ mohm] at Vgs=10V(TYP) | |
| Rds(on) [ mohm] at Vgs=10V(MAX) | |
| Rds(on) [ mohm] at Vgs=4.5V(TYP) | 16 |
| Rds(on) [ mohm] at Vgs=4.5V(MAX) | 22 |
| Rds(on) [ mohm] at Vgs=2.5V(TYP) | 22 |
| Rds(on) [ mohm] at Vgs=2.5V(MAX) | 30 |
| Qg [nC] at 10V Typ | 36 |
| Qgs [nC] Typ | 3.4 |
| Cargo Status | Active |
| Cargo Status | Active |
| Qgd [nC] Typ | 2.2 |
| Configuration | P |
| Package Type | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 3.7A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1821 pF @ 6 V |
| Power Dissipation (Max)(W) | 2.6 |
Product Description
MOT2518J2 is a low-voltage and high-power N-Channel Mosfet with VDS at -15V and ID at -8A. The MOSFET is with low RDS(on), PDFN2x2 package, small ID current, and low Qg(nC), and cost-effective. It is widely used for electronic cigarettes, DC power supplies, load switch, etc.
Documents and Media
Datasheet
📑 Datasheet
Product Application Areas
It is widely used in various application fields such as SMPS, wireless charger, power bank and laptop power supplies, etc.

