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MOT2N10B2

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Tape & Reel (TR)
MOSFET 100V 2A 3V SOT-23
📑 Datasheet

Product Attributes​

Category
Supplier Device Package SOT-23
VDss[V](min) 100
ID[A](25℃) 2
VGS(th)[V](max) 3
Rds(on) [ mohm] at Vgs=10V(TYP) 260
Rds(on) [ mohm] at Vgs=10V(MAX) 320
Rds(on) [ mohm] at Vgs=4.5V(TYP) 320
Rds(on) [ mohm] at Vgs=4.5V(MAX) 380
Rds(on) [ mohm] at Vgs=2.5V(TYP)
Rds(on) [ mohm] at Vgs=2.5V(MAX)
Qg [nC] at 10V Typ 13
Qgs [nC] Typ 35
Qgd [nC] Typ 2
Configuration Single_N
Package Type Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Operating Temperature -40°C ~ 150°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 20 V
Power Dissipation (Max) 500mW

Product Description

MOT2N10B2 is a 100V N MOSFET with an ID current of 2A. It is a very commonly used MOS product on the market. It has the characteristics of small size, light weight, stability and reliability, low on-state internal resistance and high current carrying capacity, and low price. It is widely used in power supply, signal processing, LED drive circuits, and is suitable for high performance, miniaturization and low power consumption fields.

Documents and Media

Datasheet
📑 Datasheet

Product Application Areas

Applicable to electronic cigarettes, electric toys, table lamps

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Phone

+86 15827290669

Address

19th Floor, Shenchengtou Center Building, Guiyuan Subdistrict, Luohu District, Shenzhen City, Guangdong Province, China

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