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MOT1165G

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 100
ID[A](25℃) 80
VGS(th)[V](max) 2.5
Rds(on) [ mohm] at Vgs=10V(TYP) 6.2
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Product information

Specifications, documents and sourcing support for MOT1165G.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
PDFN5*6
BVDSS
100
ID[A](25℃)
80
VGS(th)[V](max)
2.5
Rds(on) [ mohm] at Vgs=10V(TYP)
6.2
Rds(on) [ mohm] at Vgs=10V(MAX)
7.5
Package
Tape & Reel (TR)
Mounting Type
Surface Mount
Vgs (Max)
±20V

MOT1165G

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 80V 100A 6.2 PDFN5*6

MOT1165G is an N-channel trench MOSFET in PDFN5*6, rated at 100 V and 80 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Alpha&Omega (AOS)AON6510MOT1165G
onsemiNVMFS5C457NWFT1GMOT1165G
NexperiaPSMN6R2-80YLDXMOT1165G
扬杰科技(YJ)YJG80N06GMOT1165G
华润微(CRMC)CRMC80N06GMOT1165G
东海半导体(WXDH)WNSC8006GNMOT1165G

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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