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MOT120N10D

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 100
ID[A](25℃) 120
VGS(th)[V](max) 2.5
Rds(on) [ mohm] at Vgs=10V(TYP) 6
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Product information

Specifications, documents and sourcing support for MOT120N10D.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-252
BVDSS
100
ID[A](25℃)
120
VGS(th)[V](max)
2.5
Rds(on) [ mohm] at Vgs=10V(TYP)
6
Rds(on) [ mohm] at Vgs=10V(MAX)
7.5
Package
Tape & Reel (TR)
Mounting Type
Surface Mount
Vgs (Max)
±20V

MOT120N10D

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 120V 100A 6 TO-252

MOT120N10D is an N-channel trench MOSFET in TO-252, rated at 100 V and 120 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
onsemi(原Fairchild)FDD18N120MOT120N10D
NexperiaPSMN6R0-120YLDMOT120N10D
VishaySi7464DPMOT120N10D
扬杰科技(YJ)YJD120N10DMOT120N10D
华润微(CRMC)CRMC120N10DMOT120N10D
东海半导体(WXDH)WNSC12N6UNMOT120N10D

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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