Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

MOT180N10A

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 100
ID[A](25℃) 180
VGS(th)[V](max) 4
Rds(on) [ mohm] at Vgs=10V(TYP) 3
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT180N10A.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-220
BVDSS
100
ID[A](25℃)
180
VGS(th)[V](max)
4
Rds(on) [ mohm] at Vgs=10V(TYP)
3
Rds(on) [ mohm] at Vgs=10V(MAX)
4
Package
Tube
Mounting Type
Through Hole
Vgs (Max)
±20V

MOT180N10A

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 180V 100A 3 TO-220

MOT180N10A is an N-channel trench MOSFET in TO-220, rated at 100 V and 180 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
onsemi(原Fairchild)FQP50N20CMOT180N10A
STMicroelectronicsSTP50NF20MOT180N10A
Vishay(原IR)IRFB4110MOT180N10A
扬杰科技(YJ)YJM180N10AMOT180N10A
华润微(CRMC)CRMC180N10AMOT180N10A

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.