MOT30N10BD
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Product Attributes
| Category | Medium/Low Trench SGT MOS |
| Supplier Device Package | TO-252 |
| BVDSS | 100 |
| ID[A](25℃) | 30 |
| VGS(th)[V](max) | 2.5 |
| Rds(on) [ mohm] at Vgs=10V（TYP) | 32 |
| Rds(on) [ mohm] at Vgs=10V（MAX) | 42 |
| Rds(on) [ mohm] at Vgs=4.5V（TYP) | 34 |
| Rds(on) [ mohm] at Vgs=4.5V（MAX) | 45 |
| Rds(on) [ mohm] at Vgs=2.5V（TYP) | |
| Rds(on) [ mohm] at Vgs=2.5V（MAX) | |
| Qg [nC] at 10V Typ | 27.6 |
| Qgs [nC] Typ | 5.5 |
| Cargo Status | Active |
| Cargo Status | Active |
| Qgd [nC] Typ | 6.9 |
| Configuration | N |
| Package Type | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 20 V |
| Power Dissipation (Max)(W) | 54 |
Product Description
MOT30N10BD is a middle-voltage and high-power N-Channel Mosfet with VDS at 100V and ID at 30A. It has many benefits such as large package size, quick switching speed, low gate drive current, and high input impedance. Those highlight its cost-effective during the applications in vavious electronic devices, especially in situations where fast switching on-off and efficient energy conversion are required. It is mainly used for DC switching power supplies, telephone power supplies, power tools, etc.
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Datasheet
Product Application Areas
It is widely used in various application fields such as PD, adapter, power bank, wireless charger and so on.