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MOT3136E

It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.

BVDSS 30
ID[A](25℃) 120
VGS(th)[V](max) 3
Rds(on) [ mohm] at Vgs=10V(TYP) 4
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Product information

Specifications, documents and sourcing support for MOT3136E.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-263
BVDSS
30
ID[A](25℃)
120
VGS(th)[V](max)
3
Rds(on) [ mohm] at Vgs=10V(TYP)
4
Rds(on) [ mohm] at Vgs=10V(MAX)
5

Overview & applications

Product positioning and recommended use cases.

MOSFET N 120V 30A 4 TO-263

MOT3136E is a low-voltage and high-power N-Channel Mosfet with VDS at 30V and ID at 120A. The MOSFET is with low RDS(on), large package size, large ID current, and low Qg(nC), and cost-effective. It is widely used for DC power supplies, UPS, etc.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
STMicroelectronicsSTB60NF12LMOT3136E
Vishay(原IR)IRFB4115SMOT3136E
扬杰科技(YJ)YJE120N02AEMOT3136E
华润微(CRMC)CRMC120N02AEMOT3136E

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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