Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

MOT3138G

It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.

BVDSS 30
ID[A](25℃) 120
VGS(th)[V](max) 3
Rds(on) [ mohm] at Vgs=10V(TYP) 3.2
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT3138G.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
PDFN5*6
BVDSS
30
ID[A](25℃)
120
VGS(th)[V](max)
3
Rds(on) [ mohm] at Vgs=10V(TYP)
3.2
Rds(on) [ mohm] at Vgs=10V(MAX)
4

MOT3138G

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 120V 30A 3.2 PDFN5*6

MOT3138G is a low-voltage and high-power N-Channel Mosfet with VDS at 30V and ID at 120A. The MOSFET is with low RDS(on), PDFN5X6 package, large ID current, and low Qg(nC), and cost-effective. It is widely used for DC power supplies, UPS, etc.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Alpha&Omega (AOS)AON7516MOT3138G
NexperiaPSMN3R2-120YLDXMOT3138G
扬杰科技(YJ)YJG120N02BGMOT3138G
华润微(CRMC)CRMC120N02BGMOT3138G

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.