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MOT60R070W

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 50
VDss(V) 600
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.07
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Product information

Specifications, documents and sourcing support for MOT60R070W.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-247S
ID(A)
50
VDss(V)
600
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.07

MOT60R070W

Review electrical characteristics, package drawings and test conditions.

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Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 600V 50A 0.07 TO-247S

MOT60R070W is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS C7)IPW60R070C7MOT60R070W
STMicroelectronics (MDmesh M2)STW57N60M2MOT60R070W
STMicroelectronics (MDmesh M6)STW57N60M6MOT60R070W
onsemi (SuperFET III)FCH47N60FMOT60R070W
onsemi (SJ)NTH047N60S3MOT60R070W
Toshiba (DTMOS)TK62P60WMOT60R070W
新洁能(NCE)NCW47N60FWMOT60R070W
扬杰科技(YJ)YFW47N60WMOT60R070W
华润微(CRMC)CRG47N60WMOT60R070W
无锡紫光微(UNIGROUP)TPW60R070MMOT60R070W

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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