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MOT6113G

It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.

BVDSS 60
ID[A](25℃) 252
VGS(th)[V](max) 3.8
Rds(on) [ mohm] at Vgs=10V(TYP) 1.1
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Product information

Specifications, documents and sourcing support for MOT6113G.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
PDFN5*6
BVDSS
60
ID[A](25℃)
252
VGS(th)[V](max)
3.8
Rds(on) [ mohm] at Vgs=10V(TYP)
1.1
Rds(on) [ mohm] at Vgs=10V(MAX)
1.3

Overview & applications

Product positioning and recommended use cases.

MOSFET N 252V 60A 1.1 PDFN5*6

MOT6113G is a low voltage N-Channel Mosfet with VDS at 60V and ID at 252A. The MOSFET is with large package size, low RDS(on), large ID current, low Qg(nC) and cost-effective. It is widely used for high-power DC power supply and motor drive.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Alpha&Omega (AOS)AON7540MOT6113G
NexperiaPSMN1R1-252YLDXMOT6113G
扬杰科技(YJ)YJG252N01GMOT6113G
华润微(CRMC)CRMC252N01GMOT6113G

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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