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MOT65R070W

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 50
VDss(V) 650
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.07
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Product information

Specifications, documents and sourcing support for MOT65R070W.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-247S
ID(A)
50
VDss(V)
650
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.07

Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 650V 50A 0.07 TO-247S

MOT65R070W is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS C7)IPW65R070C7MOT65R070W
Infineon (CoolMOS C7)IPL65R070C7MOT65R070W
STMicroelectronics (MDmesh M5)STW57N65M5MOT65R070W
onsemi (SuperFET III)FCH47N65FMOT65R070W
onsemi (SJ)NTH047N65S3MOT65R070W
Toshiba (DTMOS)TK62P65WMOT65R070W
新洁能(NCE)NCW47N65FWMOT65R070W
扬杰科技(YJ)YFW47N65WMOT65R070W
华润微(CRMC)CRG47N65WMOT65R070W
无锡紫光微(UNIGROUP)TPW65R070MMOT65R070W

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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