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MOT65R550F

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 8
VDss(V) 650
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.55
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Product information

Specifications, documents and sourcing support for MOT65R550F.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-220FP
ID(A)
8
VDss(V)
650
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.55
Package
Tube
Mounting Type
Through Hole
Power Dissipation Max(W)
29

MOT65R550F

Review electrical characteristics, package drawings and test conditions.

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Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 650V 8A 0.55 TO-220FP

MOT65R550F is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS CE)IPA65R550CEMOT65R550F
Infineon (CoolMOS CE)IPD65R550CEMOT65R550F
STMicroelectronics (MDmesh M5)STF8N65M5MOT65R550F
STMicroelectronics (MDmesh M6)STF8N65M6MOT65R550F
onsemi (SuperFET)FCP8N65FMOT65R550F
Toshiba (DTMOS)TK8P65W-TF1MOT65R550F
新洁能(NCE)NCP8N65FPMOT65R550F
扬杰科技(YJ)YFM8N65FMOT65R550F
华润微(CRMC)CRG8N65FMOT65R550F
无锡紫光微(UNIGROUP)TPA65R550MMOT65R550F
士兰微(Silan)SVF8N65FMOT65R550F

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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