MOT65R850D
It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.
Product information
Specifications, documents and sourcing support for MOT65R850D.
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- Supplier Device Package
- TO-252
- ID(A)
- 4.5
- VDss(V)
- 650
- VGS(th)(V)
- 2-4
- Rds(on) Max(mΩ)
- 0.9
- Package
- Tape & Reel (TR)
- Mounting Type
- Surface Mount
- Power Dissipation Max(W)
- 37
MOT65R850D
Review electrical characteristics, package drawings and test conditions.
Overview & applications
Product positioning and recommended use cases.
MOSFET N-CH 650V 4.5A 0.9 TO-252
MOT65R850D is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses. It is particularly suitable for the applications in high power density and high-efficiency power electronic conversion systems.
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| Infineon (CoolMOS CE) | IPD65R850CE | MOT65R850D |
| STMicroelectronics (MDmesh M5) | STD5N65M5 | MOT65R850D |
| STMicroelectronics (MDmesh M6) | STD5N65M6 | MOT65R850D |
| onsemi (SuperFET) | FCD5N65F | MOT65R850D |
| Toshiba (DTMOS) | TK5P65W | MOT65R850D |
| 新洁能（NCE） | NCD5N65FD | MOT65R850D |
| 扬杰科技（YJ） | YDM5N65D | MOT65R850D |
| 无锡紫光微（UNIGROUP） | TPD65R850M | MOT65R850D |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
Talk to an application engineer
Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.
