High-Voltage Planar MOS
Active
MOT7N65YA
应用于工业领域的UPS、电动汽车、通信电源和消费领域的LED照明、适配器、TV电源和PC电源等领域
VDss(V)
650
ID(A)
7
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
1.4
Engineering support
Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources
Product information
Specifications, documents and sourcing support for MOT7N65YA.
01
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- VDss(V)
- 650
- ID(A)
- 7
- VGS(th)(V)
- 2-4
- Rds(on) Max(mΩ)
- 1.4
- Supplier Device Package
- TO-220
02
Overview & applications
Product positioning and recommended use cases.
MOSFET 650v 7A 1.4 TO-220
MOT7N65YA是一款VD MOSFET,采用业界优良的平面技术设计制造而成,具有较低的导通损耗和开关损耗,适用于各类开关电源应用。
03
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| 扬杰科技(YJ) | YFM7N65YA | MOT7N65YA |
| onsemi(原Fairchild) | FQP7N65CY | MOT7N65YA |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
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