MOT4N65F
It is widely used in UPS, electric vehicles, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.
Product information
Specifications, documents and sourcing support for MOT4N65F.
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- VDss(V)
- 650
- ID(A)
- 4
- VGS(th)(V)
- 2-4
- Rds(on) Max(mΩ)
- 2.8
- Supplier Device Package
- TO-220F
- Gate Charge (Qg) (Max) @ Vgs
- 12.5 nC @ 10 V
- Poer Dissipation (Max)
- 30
- Mounting Type
- Through Hole
MOT4N65F-1
Review electrical characteristics, package drawings and test conditions.
Overview & applications
Product positioning and recommended use cases.
MOSFET 650v 4A 2.8 TO-220F
MOT4N65F is a VD MOSFET, which is designed and manufactured with the best planar technology of the industry. It has a lower conduction loss and switching loss, so as to suitable for various switching mode power supply applications.
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| onsemi（原Fairchild） | FQPF4N65C | MOT4N65F |
| STMicroelectronics | STF4NK65Z | MOT4N65F |
| Toshiba | TK4A65D-TF1 | MOT4N65F |
| ROHM | R6504ENZ | MOT4N65F |
| 扬杰科技（YJ） | YFM4N65F | MOT4N65F |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
Talk to an application engineer
Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.
