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MOT65R1K2F

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 4
VDss(V) 650
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 1.2
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Product information

Specifications, documents and sourcing support for MOT65R1K2F.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-220FP
ID(A)
4
VDss(V)
650
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
1.2

Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 650V 4A 1.2 TO-220FP

MOT65R1K2F is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses, and able to operate stably under high voltage conditions. It is suitable for high-frequency applications.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS CE)IPA65R1K4CEMOT65R1K2F
Infineon (CoolMOS CE)IPD65R1K4CEMOT65R1K2F
STMicroelectronics (MDmesh M5)STF4N65M5MOT65R1K2F
STMicroelectronics (MDmesh M6)STF4N65M6MOT65R1K2F
onsemi (SuperFET)FCP4N65FMOT65R1K2F
新洁能(NCE)NCP4N65FPMOT65R1K2F
扬杰科技(YJ)YFM4N65FMOT65R1K2F
无锡紫光微(UNIGROUP)TPA65R1K2MMOT65R1K2F
士兰微(Silan)SVF4N65FMOT65R1K2F

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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