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MOT65R070GN

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Active
Tube
MOSFET N-CH 650V 50A 0.07 TO-247

Product Attributes​

Category
Supplier Device Package TO-247
ID(A) 50
VDss[V] 650
VGS(th)(V) 2-4
RDSON(MAX)(Ω) 0.07
Package Type Tube
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Cargo Status Active
Operating Temperature -40°C ~ 150°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95.1 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) 4100 pF @ 25 V
Power Dissipation (Max)(W) 350

Product Description

MOT65R070GN is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses, and able to operate stably under high voltage conditions. It is suitable for high-frequency applications.

Documents and Media

Datasheet

Product Application Areas

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

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Phone

+86 15827290669

Address

19th Floor, Shenchengtou Center Building, Guiyuan Subdistrict, Luohu District, Shenzhen City, Guangdong Province, China

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