Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

BSS123

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 100
ID[A](25℃) 0.17
VGS(th)[V](max) 2.8
Rds(on) [ mohm] at Vgs=10V(TYP) 2.8
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for BSS123.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
SOT-23
BVDSS
100
ID[A](25℃)
0.17
VGS(th)[V](max)
2.8
Rds(on) [ mohm] at Vgs=10V(TYP)
2.8
Rds(on) [ mohm] at Vgs=10V(MAX)
6

Overview & applications

Product positioning and recommended use cases.

MOSFET N 0.17V 100A 2.8 SOT-23

BSS123 is an N-channel trench MOSFET in SOT-23, rated at 100 V and 0.17 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
NexperiaBSS123BSS123
onsemiBSS123BSS123
Diodes Inc.BSS123-7-FBSS123
VishayBSS123BSS123
STMicroelectronicsBSS123BSS123
InfineonBSS123BSS123
ROHMBSS123BSS123
扬杰科技(YJ)BSS123BSS123
华润微(CRMC)BSS123BSS123
长电科技(JCET)BSS123BSS123
中微半导体(ZMSC)BSS123BSS123

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.