Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

MOT26P10D

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS -100
ID[A](25℃) -26
VGS(th)[V](max) -2.7
Rds(on) [ mohm] at Vgs=10V(TYP) 87
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT26P10D.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-252
BVDSS
-100
ID[A](25℃)
-26
VGS(th)[V](max)
-2.7
Rds(on) [ mohm] at Vgs=10V(TYP)
87
Rds(on) [ mohm] at Vgs=10V(MAX)
103
Package
Tape & Reel (TR)
Mounting Type
Surface Mount
Vgs (Max)
±20V

MOT26P10D

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET P -26V -100A 87 TO-252

MOT26P10D is a P-channel trench MOSFET in TO-252, rated at 100 V and 26 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
扬杰科技(YJ)YJD26P10DMOT26P10D
华润微(CRMC)CRMC26P10DMOT26P10D
VishaySi7460DPMOT26P10D
onsemi(原Fairchild)FDD20P025MOT26P10D

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.