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MOT3M012G

It is widely used in various application fields such as motor drive, power bank, wireless charger and so on.

BVDSS 30
ID[A](25℃) 30
VGS(th)[V](max) 2.5
Rds(on) [ mohm] at Vgs=10V(TYP) 9
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Product information

Specifications, documents and sourcing support for MOT3M012G.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
PDFN5*6
BVDSS
30
ID[A](25℃)
30
VGS(th)[V](max)
2.5
Rds(on) [ mohm] at Vgs=10V(TYP)
9
Rds(on) [ mohm] at Vgs=10V(MAX)
11

MOT3M012G

Review electrical characteristics, package drawings and test conditions.

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Overview & applications

Product positioning and recommended use cases.

MOSFET N+P 30V 30A 9 PDFN5*6

MOT3M012G is a N+P dual channel Mosfet with VDS at 30V/-30V and ID at 30A/-30A. It is a customized MOSFET with many benefits such as small package size, low on-state resistance, low gate charge, high current carrying capacity, and cost-effective. The Mosfet is mainly used in motor drive, power bank, wireless charger and so on.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Alpha&Omega (AOS)AON6400MOT3M012G
NexperiaPSMN009-30YLDXMOT3M012G
扬杰科技(YJ)YJG30NP09GMOT3M012G
华润微(CRMC)CRMC30NP09GMOT3M012G

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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