Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

MOT9N25D

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 250
ID[A](25℃) 9
VGS(th)[V](max) 4
Rds(on) [ mohm] at Vgs=10V(TYP) 330
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT9N25D.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-252
BVDSS
250
ID[A](25℃)
9
VGS(th)[V](max)
4
Rds(on) [ mohm] at Vgs=10V(TYP)
330
Rds(on) [ mohm] at Vgs=10V(MAX)
400

MOT9N25D

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 9V 250A 330 TO-252

MOT9N25D is an N-channel trench MOSFET in TO-252, rated at 250 V and 9 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
NexperiaPSMN3R2-25YLCMOT9N25D
Alpha&Omega (AOS)AON6406MOT9N25D
ROHMHAT2166HMOT9N25D
扬杰科技(YJ)YJD9N25DMOT9N25D
华润微(CRMC)CRMC9N25DMOT9N25D
东海半导体(WXDH)WNSC925UNMOT9N25D

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.