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MOT120N10E

It is widely used in various application fields such as PD, adapter,  power bank and LED lighting, etc.

BVDSS 100
ID[A](25℃) 120
VGS(th)[V](max) 4
Rds(on) [ mohm] at Vgs=10V(TYP) 4.3
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Product information

Specifications, documents and sourcing support for MOT120N10E.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-263
BVDSS
100
ID[A](25℃)
120
VGS(th)[V](max)
4
Rds(on) [ mohm] at Vgs=10V(TYP)
4.3
Rds(on) [ mohm] at Vgs=10V(MAX)
5
Package
Tape & Reel (TR)
Mounting Type
Through Hole
Vgs (Max)
±20V

MOT120N10E

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 120V 100A 4.3 TO-263

MOT120N10E is a middle-voltage with high-power N- channel Mosfet with VDS at 100V and ID at 129A. It has many benefits such as large package size, quick switching speed, low RDS(on), low gate drive current, low Ciss(pF), and cost-effective. Those highlight its cost-effective during the applications in vavious electronic devices, especially in situations where fast switching on-off and efficient energy conversion are required. It is mainly used for Charger, adapter, LED lighting applications.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
STMicroelectronicsSTB60NF12LMOT120N10E
Vishay(原IR)IRF34N15DSMOT120N10E
扬杰科技(YJ)YJE120N10EMOT120N10E
华润微(CRMC)CRMC120N10EMOT120N10E

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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