MOT SiC MOSFET (MOT80CH180F) has an actual VDS of up to 800 Vs, with an internal blockage of RDS = 180 m, Qg = 28. 8 nC, electricity flow ID = 20A, with an advanced program to make 12 Vs open and 15 Vs fully operational.
MOS (MOT20N65HF) has an actual VDS of up to 650 V, an internal blockage of RDS = 350 m, Qg = 54nC, a current ID = 20A, which allows 3V critical open and 12V fully operational.
Test Power – MOSFET at 120W power adapter (220AC 1. 5A)
Test temperature rise – MOSFET at 120W power adaptor (220AC 1. 5A)
Test temperature rise – MOSFET at 120W power adaptor (220AC 1. 5A)
In summary:
1 Pyramid MOT80CH180F can also operate on 120W power adapters with an ordinary drive of 12V, with a power conversion of up to 91. 76%;
2. Temperature rises at 6. 2°C compared to MOT20N65HF under the same conditions;
3 MOT SIC MOSFET, with a conventional drive of 12V, and nudist mos, without dispersed hot tablets, at 102°C;
4. Pyramid MOT20N65HF operating with a 12V drive on a 120W power adapter with an operational power conversion of 91. 68%
