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MOT SiC MOSFETs Improve New-Energy and Industrial Power Efficiency

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When Silicon-based components touch the limit, Silicon carbide is rewriting the power semiconductor rules.

New energy vehicle penetration continues to rise, the size of the photovoltaics is constantly rising, and industrial variability and the demand for charger markets erupts — behind this series of industry trends, a central proposition is shared: Traditional silicon-based MOSFET has gradually touched its physical limits, and the era of broadband semiconductors has officially arrived.

The SiC (Silicate carbide) is the preferred device for high-pressure, high bandwidth, high voltage, high heat conductor performance, low switch loss and four core advantages. By 2030, it is expected that the SiCware market will quickly capture mainstream power applications, depending on low wear and tear and high frequency responsiveness.

The engineer's three most important questions. What about SiC Mosfet?

1 How much efficiency can be enhanced? Switch losses in the 600V-1200V voltage segment could be reduced by more than 50 per cent compared to the same-specified silicon MOSFET, particularly under the high frequency (HF) condition (100100kHz). This means that, with equal power, dispersing thermal design can be significantly simplified, with the overall size and weight of the system decreasing – This is essential for the light quantification design of the new energy vehicle OBC (car charger) and the main reverser.

Can the heat management challenge be resolved? The sic's heat coefficient is about three times that of silicon, with a temperature of 175°C or higher, which greatly increases the capacity of the apparatus to work in high temperatures. Thermal failure, which has long plagued engineers in industrial power sources and photovoltaic transformers, has been fundamentally improved under the SiC programme.

Can the reliability of the national production SiC be trusted? And that's where MOT gives the answer.

Nic MOSFET: National production plant, performance against standards, controlled supply

As a state-level specialty new "Small Giants" enterprise, MOT is actively promoting the autonomous development and domesticization of car-grade car chips. The following core competitivenesss are found in the Qin SiC MOSFET products:

• Full alignment of key parameters: Rds (on), barbed wire threshold voltage, and core electrical parameters such as reversion properties of the bipolar tube, to provide internationally mainstream products such as the British and Roma, with a national production programme that can be directly replaced by engineers;

• Validation of wide-temperature stability: the product meets the full life-cycle requirements of new energy vehicle applications through a rigorous AEC-Q101 grade reliability test;

• Lead industry in the containment process: the auto-advanced state-of-the-art containment technology, which significantly reduces the parasitic sense and thermal resistance and allows the device to maintain excellent wave mass in high-frequency switches;

• Full ownership of supply chains: autonomous research and development, self-production, annual output exceeding 10 billion, total elimination of supply risk and provision of stable delivery security for production projects.

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The Sic MOSFET product line covers the following core applications:

• New Energy Motor Main Resilient / OBC / DC-DC

: : Industrial variants and server drivers

• Photovoltaic retrogressors and reservoir conversions Device

• Fast-charge module for charging stakes

• Power efficiency on the AI server (PFC level)

MT75CL160D, MOT75CL160HF, MOT75CL180D, MOT75CL180HF, MOT75CL300D, MOT80CH090N, MOT80CH090HF, MOT80CH12D, MOT80CH120HF, MOT80CH180D, MOT80CH180HF, MOT80CH380D, MOT80CH380F, MOT80CH380F, MOT80CH550D, MOT80CH550F, MOT80CH550F, MOT80CH680D, MOT80CH680F

Concluding remarks

The prevalence of broadband semiconductors is not a trend, but a reality that is taking place. For engineers, the choice of a reliable national production, SiC MOSFET, is to pre-empt the efficiency and competitiveness of the next generation of products; for business policy makers, the choice is to choose a supply chain security, cost-controllable, and technology-continuous domesticization path.