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MOT60R850F

It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.

ID(A) 4.5
VDss(V) 600
VGS(th)(V) 2-4
Rds(on) Max(mΩ) 0.85
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Product information

Specifications, documents and sourcing support for MOT60R850F.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
TO-220FP
ID(A)
4.5
VDss(V)
600
VGS(th)(V)
2-4
Rds(on) Max(mΩ)
0.85

Overview & applications

Product positioning and recommended use cases.

MOSFET N-CH 600V 4.5A 0.85 TO-220FP

MOT60R850F is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses, and able to operate stably under high voltage conditions. It is suitable for high-frequency applications.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Infineon (CoolMOS CE)IPD60R850CEMOT60R850F
Infineon (CoolMOS CE)IPA60R850CEMOT60R850F
Infineon (CoolMOS P7)IPD60R850P7SMOT60R850F
STMicroelectronics (MDmesh M2)STF5N60M2MOT60R850F
STMicroelectronics (MDmesh M6)STF5N60M6MOT60R850F
onsemi (SuperFET)FCP5N60FMOT60R850F
Toshiba (DTMOS)TK5P60W-TF1MOT60R850F
新洁能(NCE)NCP5N60FPMOT60R850F
扬杰科技(YJ)YFM5N60FMOT60R850F
华润微(CRMC)CRG5N60FMOT60R850F
无锡紫光微(UNIGROUP)TPA60R850MMOT60R850F
士兰微(Silan)SVF5N60FMOT60R850F

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

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