MOT80R1K2D
It is widely used in power supply in 5G base station, communication power supply in the industrial field, and LED lightings, adapters, TV power supply and PC power supply in the consumer field, etc.
Product information
Specifications, documents and sourcing support for MOT80R1K2D.
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- Supplier Device Package
- TO-252
- ID(A)
- 4
- VDss(V)
- 800
- VGS(th)(V)
- 2-4
- Rds(on) Max(mΩ)
- 1.2
Overview & applications
Product positioning and recommended use cases.
MOSFET N-CH 800V 4A 1.2 TO-252
MOT80R1K2D is a SJ MOSFET, which is designed and manufactured with multi-layer epitaxial technology. The Super Junction MOSFET has extremely low RDS(on) and Qg, so as to it can significantly reduces conduction and switching losses, and able to operate stably under high voltage conditions. It is suitable for high-frequency applications.
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| Infineon (CoolMOS C3) | IPD80R1K2C3 | MOT80R1K2D |
| STMicroelectronics (MDmesh M6) | STD4N80M6 | MOT80R1K2D |
| onsemi (SuperFET) | FCD4N80F | MOT80R1K2D |
| 新洁能（NCE） | NCD4N80FD | MOT80R1K2D |
| 扬杰科技（YJ） | YDM4N80D | MOT80R1K2D |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
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