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MOT2124G

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Tape & Reel (TR)
MOSFET N 115V 20A PDFN5*6

Product Attributes​

Category
Supplier Device Package PDFN5*6
BVDSS 20
ID[A](25℃) 115
VGS(th)[V](max) 1.2
Rds(on) [ mohm] at Vgs=10V(TYP)
Rds(on) [ mohm] at Vgs=10V(MAX)
Rds(on) [ mohm] at Vgs=4.5V(TYP) 2.3
Rds(on) [ mohm] at Vgs=4.5V(MAX) 3
Rds(on) [ mohm] at Vgs=2.5V(TYP) 4.5
Rds(on) [ mohm] at Vgs=2.5V(MAX) 5
Qg [nC] at 10V Typ 64
Qgs [nC] Typ 12
Cargo Status Active
Cargo Status Active
Qgd [nC] Typ 19
Configuration N
Package Type Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3489 pF @ 12 V
Power Dissipation (Max)(W) 67

Product Description

MOT2124G is a low-voltage N-Channel Mosfet with VDS at 60V and ID at 155A. The MOSFET has many benefits such as large ID current, large package size, advanced SGT technology, low RDS(on), low Qg(nC) and cost-effective. It is widely used for DC power supply, UPS and so on.

Documents and Media

Datasheet

Product Application Areas

It is widely used in various application fields such as PD, adapter, wireless charger, EV charger and power bank, etc.

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Phone

+86 15827290669

Address

19th Floor, Shenchengtou Center Building, Guiyuan Subdistrict, Luohu District, Shenzhen City, Guangdong Province, China

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