Rooted in China · Global discrete semiconductor supportGlobal semiconductor support

Sale!
Active

MOT6129G

Suitable for load switching, PWM control, BMS, motor drives and efficient DC power management.

BVDSS 60
ID[A](25℃) 114
VGS(th)[V](max) 2.5
Rds(on) [ mohm] at Vgs=10V(TYP) 3.7
View Datasheet
Engineering support Built for faster component evaluation and design-in decisions
Verified parametersKey electrical data at a glance
Design-in resourcesDatasheet and cross-reference support
Application supportEngineering contact available below
Engineering resources

Product information

Specifications, documents and sourcing support for MOT6129G.

Technical specifications

Parametric data for product selection and design review.

Cargo Status
Active
Supplier Device Package
PDFN5*6
BVDSS
60
ID[A](25℃)
114
VGS(th)[V](max)
2.5
Rds(on) [ mohm] at Vgs=10V(TYP)
3.7
Rds(on) [ mohm] at Vgs=10V(MAX)
4.5
Package
Tape & Reel (TR)
Mounting Type
Surface Mount
Vgs (Max)
±20V

MOT6129G

Review electrical characteristics, package drawings and test conditions.

Download Datasheet

Overview & applications

Product positioning and recommended use cases.

MOSFET N 114V 60A 3.7 PDFN5*6

MOT6129G is an N-channel trench MOSFET in PDFN5*6, rated at 60 V and 114 A. Low on-resistance and gate charge support efficient switching in motor-control, battery and power-management circuits.

Cross reference

Common market parts that may be evaluated against this MOT device.

ManufacturerMarket part numberMOT part number
Alpha&Omega (AOS)AON7520AMOT6129G
NexperiaPSMN3R7-114YLDXMOT6129G
扬杰科技(YJ)YJG114N03GMOT6129G
华润微(CRMC)CRMC114N03GMOT6129G

Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.

Need help selecting a part?

Talk to an application engineer

Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.