MOT65R180GD
Designed for high-efficiency SMPS, LED lighting, adapters, 5G base-station power and industrial power systems.
Product information
Specifications, documents and sourcing support for MOT65R180GD.
Technical specifications
Parametric data for product selection and design review.
- Cargo Status
- Active
- Supplier Device Package
- TO-252
- ID(A)
- 20
- VDss(V)
- 650
- VGS(th)(V)
- 2-4
- Rds(on) Max(mΩ)
- 0.18
MOT65R180GD
Review electrical characteristics, package drawings and test conditions.
Overview & applications
Product positioning and recommended use cases.
MOSFET N-CH 650V 20A 0.18 TO-252
MOT65R180GD is a super-junction N-channel MOSFET in TO-252, rated at 650 V and 20 A. Low on-resistance and gate charge reduce conduction and switching losses in compact power converters.
Cross reference
Common market parts that may be evaluated against this MOT device.
| Manufacturer | Market part number | MOT part number |
|---|---|---|
| Infineon (CoolMOS CFD7) | IPD65R150CFD7S | MOT65R180GD |
| STMicroelectronics (MDmesh DM6) | STD22N65DM6 | MOT65R180GD |
| onsemi (SuperFET FD) | FCD22N65FD | MOT65R180GD |
| 新洁能（NCE） | NCD22N65FGD | MOT65R180GD |
| 扬杰科技（YJ） | YDM22N65GD | MOT65R180GD |
Cross references are a starting point for evaluation. Confirm electrical and package compatibility in the datasheets before design-in.
Talk to an application engineer
Send us your target specifications, quantity and application. Our engineering team will follow up through the Contact Us page.
