Which Products Don’t Use GaN Transistors?
Many low-cost, low-frequency, very-low-power, legacy, and ultra-high-voltage products still use silicon, IGBTs, BJTs, or SiC instead of GaN transistors.
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Wide-bandgap device design for efficient, high-density power conversion.
Many low-cost, low-frequency, very-low-power, legacy, and ultra-high-voltage products still use silicon, IGBTs, BJTs, or SiC instead of GaN transistors.
Many low-cost, low-frequency, very-low-power, legacy, and ultra-high-voltage products still use silicon, IGBTs, BJTs, or SiC instead of GaN transistors.
GaN is often better for very fast switching and high power density at lower voltage, while SiC MOSFETs often lead at higher voltage, power, temperature,…
GaN transistors are used where high switching speed, low charge, compact magnetics, and high power density justify specialized gate drive, layout, thermal, and EMI design.
A 650 V SiC MOSFET is a silicon-carbide power switch rated for a maximum drain-source voltage of 650 V and optimized for efficient high-frequency conversion…
SiC MOSFETs are used in high-voltage, high-power converters such as EV traction inverters, onboard chargers, DC fast chargers, solar and storage inverters, industrial drives, server…
Drive a SiC MOSFET with the datasheet-specified gate voltage, a high-CMTI isolated driver, short Kelvin-source gate loop, separate turn-on and turn-off resistors, and fast short-circuit…
The vertical insulated-gate AlGaN/GaN HFET combines a lateral 2DEG channel with current apertures and a vertical GaN drift region. Learn its structure, reported prototype results,…
SiC MOSFETs can power high-voltage drones and eVTOL propulsion inverters, but they are rarely the best choice for a small low-voltage quadcopter. Compare voltage, loss,…